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RF2104
2
Typical Applications
* 900MHz ISM Band Applications * 400MHz Industrial Radios * Driver for Higher Power Applications * Portable Battery-Powered Equipment * Commercial and Consumer Systems * Base Station Equipment
MEDIUM POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is packaged in a plastic quad-batwing 16-lead package, and is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors. It produces an output power level of up to 500mW (CW) at 3.6V. The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is +27dBm. The unit has a total gain of 26dB, depending upon the output matching network. Optimum Technology Matching(R) Applied
0.020 REF 0.157 0.150 0.020 0.014
-A0.008 0.004
0.393 0.386
0.034 REF
0.068 0.064
0.244 0.229 8 MAX 0 MIN 0.034 0.009 0.016 0.007
0.068 0.053
u
Package Style: CJ2BAT0
Si BJT Si Bi-CMOS
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* 400MHz to 1000MHz Operation * Up to 500mW CW Output Power * 26dB Small Signal Gain * 40dB Gain Control Range * Single 2.7V to 3.6V Supply * 40% Efficiency
VCC1 1 GND 2 GND 3 VCC2 4 RF IN 5 GND 6 GND 7 PC 8
16 GND 15 GND 14 GND 13 RF OUT 12 RF OUT 11 GND 10 GND 9 GND
BIAS
Ordering Information
RF2104 Medium Power Amplifier RF2104 PCBA-L Fully Assembled Evaluation Board (830MHz) RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz) RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Functional Block Diagram
Rev B4 010507
2-11
RF2104
Absolute Maximum Ratings Parameter
Supply Voltage Gain Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +6.0 -0.5 to +3.0 500 +12 20:1 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Bandwidth Maximum Output Power Maximum Output Power Output Third Order Intercept Power Added Efficiency Small Signal Gain Gain Control Range Second Harmonic Third Harmonic Noise Figure Input Impedance Input Return Loss Input Return Loss Output Impedance Output Return Loss Load Impedance
Specification Min. Typ. Max.
Unit
Condition
T=25C, VCC =3.6V, VPC =2.5V, ZLOAD =10, PIN =+6dBm, Freq=850MHz
24
400 to 1000 150 +27 +27 +36 40 25 35 -50 -50 5.5 50 -20 -10 50 -13 5+j0 2.7 to 3.6 250 1 4 0 <100
28 40
7.0 -15
MHz MHz dBm dBm dBm % dB dB dBc dBc dB dB dB dB V mA A mA mA A ns
With fixed matching network VCC =3.6V, PIN =+6dBm VCC =3.0V, PIN =+6dBm VCC =3.6V VCC =3.6V, POUT =+27dBm, PIN =+6dBm VCC =3.6V, VPC =+2.5V, Freq=850MHz VPC =0V to 2.5V Without external second harmonic trap
With external matching network; see application schematic Without external matching network Not matched for maximum output power Without external matching network Load Impedance for Optimal Power Match
Power Supply
Power Supply Voltage Power Supply Idle Current Total "OFF" Current Drain Total "OFF" Current Drain Current into PC pin Current into PC pin Turn-on Time 300 10 1 VPC =2.5V VPC <0.25VDC; No RF input power VPC <0.25VDC; PIN =+6dBm VPC =2.5V VPC =0V VPC =0V to VPC =+2.5VDC
2-12
Rev B4 010507
RF2104
Pin 1 Function VCC1 Description
Power supply for the bias circuits.This pin draws current proportional to VPC. When VPC is 2.5V the maximum current is about 30mA. When VPC goes down to 0V the current also goes down to 0mA.
Interface Schematic
VCC1
PC
To Bias Stages 40
2
2 3 4 GND GND VCC2
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. A via hole under each ground pin to the ground plane is recommended. Same as pin 2. Power supply for the driver stage and interstage matching. An external decoupling capacitor is required. The electrical length between the pin and this capacitor affects the gain. See the application schematic for recommended line length for optimum gain. For operation at frequencies below 600MHz a series inductor is required. 50 RF input. DC voltages are present at this pin, and an external blocking capacitor is required when connecting this pin to a DC path to ground. For optimum impedance matching, a shunt inductor to ground is recommended; see the application schematic for details. Same as pin 2. Same as pin 2. Power control pin. A DC voltage between 0V and 3.0V can be applied See pin 1 schematic. to control the gain. When no gain control is required this pin should be connected to a fixed voltage between 2.5V and 3.0V. This pin draws some current proportional to VPC. When VPC is 2.5V the maximum current into this pin is about 1mA. Same as pin 2. Same as pin 2. Same as pin 2. RF output. The power supply for the output stage also needs to be supplied to this pin through the external matching circuit. The load impedance to this pin should be 5+j0 for maximum output power.
RF OUT
VCC2
RF IN From Bias Stages
5
RF IN
See pin 4 schematic.
6 7 8
GND GND PC
9 10 11 12
GND GND GND RF OUT
From Bias Stages
13 14 15 16
RF OUT GND GND GND
Same as pin 12. Same as pin 2. Same as pin 2. Same as pin 2.
See pin 12 schematic.
Rev B4 010507
2-13
POWER AMPLIFIERS
RF2104
Application Schematic - 915MHz
VCC 10 F
330 pF
100 pF
2
POWER AMPLIFIERS
100 pF 100 pF 1 2 3 33 pF 4 7.5 pF RF IN 8.2 nH W=0.028" L=0.400" 5 6 7 PC 100 pF 8 12 5.6 pF 11 10 9 5.1 pF 13 BIAS 16 15 100 pF 14 6.8 nH 3.3 nH 7.5 pF RF OUT
Application Schematic - 830MHz
VCC 10 F
330 pF
100 pF
100 pF
100 pF 1 2 3 BIAS 16 15 100 pF 14 13 12 5.6 pF 6 7 11 10 9 5.6 pF 6.8 nH 3.3 nH 5 7.5 pF RF OUT
33 pF 4 11 pF RF IN 10 nH
PC 100 pF
8
2-14
Rev B4 010507
RF2104
Application Schematic - 420MHz
VCC 10 F
330 pF
100 pF
2
100 pF 100 pF 1 2 3 33 pF 150 pF RF IN 1.3 pF 1.8 nH 4 33 nH 5 6 7 PC 100 pF 8 12 30 pF 11 10 9 15 pF 13 BIAS 16 15 100 pF 14 5.6 nH 6.8 nH 68 pF RF OUT
Rev B4 010507
2-15
POWER AMPLIFIERS
RF2104
Evaluation Board Schematic - 915MHz
(Download Bill of Materials from www.rfmd.com.)
P1-1 C4 10 F C2 100 pF C3 100 pF 1 2 C1 330 pF C9 33 pF 3 4 J1 RF IN L1 8.2 nH 5 C7 7.5 pF 0.028" x 0.4" 6 7 P1-3 C8 100 pF NOTE: Efficiency is affected by actual position of C9 and C10; C9 is mounted close to DUT and C10 mounted away from DUT. 8 11 10 P1-1 9 P1-3 P1 1 2 3 VCC GND PC
2104400A 902 MHz to 928 MHz
C6 100 pF 16 15 14 13 12 C10 13 pF C5 100 pF L2 6.8 nH L3 3.3 nH C12 7.5 pF C11 5.1 pF
2
POWER AMPLIFIERS
BIAS
50 strip
J2 RF OUT
Evaluation Board Schematic - 830MHz
P1-1 C4 10 F C2 100 pF C3 100 pF 1 2 C1 330 pF 50 strip 5 L1 10 nH C7 15 pF 6 7 P1-3 8 12 11 10 P1-1 C8 100 pF 9 P1-3 P1 1 2 3 VCC GND PC C9 33 pF 3 4 J1 RF IN
2104401A 824 MHz to 849 MHz
C6 100 pF
16 15 14 13 C10 13 pF C5 100 pF L2 6.8 nH
L3 3.3 nH
BIAS
C12 7.5 pF C11 5.6 pF
50 strip
J2 RF OUT
2-16
Rev B4 010507
RF2104
Evaluation Board Layout - 915MHz 3" x 2"
2
POWER AMPLIFIERS
Rev B4 010507
2-17
RF2104
Evaluation Board Layout - 830MHz 3" x 2"
2
POWER AMPLIFIERS
2-18
Rev B4 010507

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